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| Hardware Documentation Data Sheet HAL 1xy Hall-Effect Switch IC Family (R) Edition April 8, 2009 DSH000150_001EN HAL1xy Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers' technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document's content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation, and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas' products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. Micronas Trademarks - HAL DATA SHEET Micronas Trademarks Choppered Offset Compensation protected by Micronas patents no. US5260614, US5406202, EP0525235 and EP0548391. Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. 2 April 8, 2009; DSH000150_001EN Micronas DATA SHEET HAL1xy Contents Page 4 4 5 5 5 6 6 8 8 8 9 10 11 11 11 11 11 12 Section 1. 1.1. 1.2. 1.3. 1.4. 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 3. 3.1. 3.2. 3.3. 3.4. 4. Title Introduction Family Overview Marking Code Operating Junction Temperature Range Solderability and Welding Specifications Outline Dimensions Positions of Sensitive Areas Absolute Maximum Ratings Recommended Operating Conditions Characteristics Magnetic Characteristics Overview Application Notes Ambient Temperature Extended Operating Conditions Start-up Behavior EMC and ESD Data Sheet History Micronas April 8, 2009; DSH000150_001EN 3 HAL1xy Hall-Effect Switch IC Family Note: The HAL1xy family has been designed for commercial and industrial applications. It is not intended to be used in automotive or automotive-like applications. 1.1. Family Overview DATA SHEET This sensor family consists of sensors with a latching and unipolar output behavior. Type Switching Behavior unipolar latching latching latching unipolar unipolar unipolar unipolar Sensitivity low high medium low high low medium high see Page 10 10 10 10 10 10 10 10 1. Introduction The HAL1xy Hall switch family is produced in CMOS technology. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. The active offset compensation leads to magnetic parameters which are robust against mechanical stress effects. In addition, the magnetic characteristics are constant in the full supply voltage and temperature range. The HAL1xy family is available in the SMD-package SOT89B-3 and in the leaded version TO92UA-6. 101 102 103 104 106 107 108 109 Unipolar Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Latching Sensors: The sensors have a latching behavior and require a magnetic north and south pole for correct functioning. The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. 4 April 8, 2009; DSH000150_001EN Micronas DATA SHEET HAL1xy Hall Sensor Package Codes HALXXXPA-T Temperature Range: I Package: TQ for SOT89B-3 JQ for TO92UA-6 1.2. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type I HAL101 HAL102 HAL103 HAL104 HAL106 HAL107 HAL108 HAL109 101I 102I 103I 104I 106I 107I 108I 109I Temperature Range C 101C 102C 103C 104C 106C 107C 108C 109C Type: 1xy Example: HAL102JQ-I Type: 102 Package: TO92UA-6 Temperature Range: TJ = -20 C to +125 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Hall Sensors. Ordering Codes, Packaging, Handling". 1.4. Solderability and Welding Soldering During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. 1.3. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). I: TJ = -20 C to +125 C C: TJ = 0 C to +85 C Welding Device terminals shall be compatible with laser and electrical welding. Please, note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1 VDD 3 OUT 2, 4 GND Fig. 1-1: Pin configuration Micronas April 8, 2009; DSH000150_001EN 5 HAL1xy 2. Specifications 2.1. Outline Dimensions DATA SHEET Fig. 2-1: SOT89B-3: Plastic Small Outline Transistor package, 4 leads, with one sensitive area Weight approximately 0.034 g. 6 April 8, 2009; DSH000150_001EN Micronas DATA SHEET HAL1xy Fig. 2-2: TO92UA-6: Plastic Transistor Standard UA package, 3 leads Weight approximately 0.106 g Micronas April 8, 2009; DSH000150_001EN 7 HAL1xy 2.2. Positions of Sensitive Areas SOT89B-3 y A4 0.95 mm nominal 0.33 mm nominal TO92UA-6 1.08 mm nominal 0.30 mm nominal DATA SHEET 2.3. Absolute Maximum Ratings Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit. All voltages listed are referenced to ground (GND). Symbol VDD VO IO TJ 1) 2) Parameter Supply Voltage Output Voltage Continuous Output On Current Junction Temperature Range Pin Name 1 3 3 Min. -15 -0.3 - -40 Max. 281) 281) 501) 1402) Unit V V mA C as long as TJmax is not exceeded t < 1000 h 2.4. Recommended Operating Conditions Functional operation of the device beyond those indicated in the "Recommended Operating Conditions/Characteristics" is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device. All voltages listed are referenced to ground (GND). Symbol VDD IO VO Parameter Supply Voltage Continuous Output on Current Output Voltage (output switched off) Pin Name 1 3 3 Min. 3.8 0 0 Max. 24 20 24 Unit V mA V Comment 8 April 8, 2009; DSH000150_001EN Micronas DATA SHEET HAL1xy 2.5. Characteristics at TJ = -20 C to +125 C, VDD = 3.8 V to 24 V, GND = 0 V at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 12 V. Symbol IDD VDDZ VOZ VOL IOH fosc Parameter Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Output Voltage over Temperature Range Output Leakage Current over Temperature Range Internal Oscillator Chopper Frequency over Temperature Range Enable Time of Output after Setting of VDD Output Rise Time Output Fall Time Pin No. 1 Min. 1.6 - - - - - - 1 - - - Typ. 3 Max. 5.2 Unit mA IDD = 25 mA, TJ = 25 C, t = 20 ms IOH = 25 mA, TJ = 25 C, t = 20 ms IOL = 20 mA Output switched off, TJ 150 C, VOH = 3.8 to 24 V HAL10y, HAL11y HAL104 Conditions 1 28.5 32 V 3 3 28 130 - 62 140 35 32 400 V mV 3 - 10 - - - 400 400 A kHz kHz s ten(O) tr tf 3 3 75 50 ns ns VDD = 12 V, RL = 820 Ohm, CL = 20 pF SOT89B Package Thermal Resistance Rthja Rthjc Junction to Ambient Junction to Case - - - - - - 212 73 K/W K/W Measured with a 1s0p board 30 mm x 10 mm x 1.5 mm, pad size (see Fig. 2-3) TO92UA Package Thermal Resistance Rthja Rthjc 1) Measured with a 1s0p board - - - - - - 225 63 K/W K/W Junction to Ambient Junction to Case VDD = 12 V, B > BON + 2 mT or B < BOFF - 2 mT 1.80 1.05 1.45 2.90 1.05 0.50 1.50 Fig. 2-3: Recommended footprint SOT89B-3, Dimensions in mm All dimensions are for reference only. The pad size may vary depending on the requirements of the soldering process. Micronas April 8, 2009; DSH000150_001EN 9 HAL1xy 2.6. Magnetic Characteristics Overview at TJ = -20 C to +125 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V. Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Switching Type HAL101 unipolar Parameter TJ -20 C 25 C 125 C HAL102 latching -20 C 25 C 125 C HAL103 latching -20 C 25 C 125 C HAL104 latching -20 C 25 C 125 C HAL106 unipolar -20 C 25 C 125 C HAL107 unipolar -20 C 25 C 125 C HAL108 unipolar -20 C 25 C 125 C HAL109 unipolar -20 C 25 C 125 C Min. 28 28 26 0.5 0.5 0.1 5.5 5 3.5 10.5 10 6.0 8.8 8.1 7.4 19.6 19.6 18.4 13.1 12.7 10.8 2.3 2.3 2.3 On point BON Typ. 33 34 32 2.8 2.6 2.4 8.4 7.6 6.7 15.8 14 10 12.5 12.0 10.0 27.5 26.5 26.0 17.5 17.0 14.6 8.1 7.9 7.7 Max. 42 42 42 6.5 6 5.5 12.5 11.5 11.0 21.5 18.5 15.5 18.0 16.5 16.0 35.8 35.0 33.6 25.0 23.8 23.0 12.0 12.0 12.0 Min. 18 18 17.5 -6.5 -6 -5.5 -12.5 -11.5 -11.0 -21.5 -18.5 -15.5 4.5 4.2 3.4 16.9 16.9 15.8 11.9 11.4 9.7 1.8 1.8 1.8 Off point BOFF Typ. 23 24 22 -2.8 -2.6 -2.4 -8.6 -7.6 -6.4 -15.8 -14 -10 7.0 6.5 6.0 23.0 22.5 22.0 15.7 15.0 13.0 5.9 5.7 5.7 Max. 30 30 30 -0.5 -0.5 -0.1 -5.5 -5 -3.5 -10.5 -10 -6.0 11.0 10.4 9.9 31.3 30.6 29.4 23.0 21.9 21.0 11.5 11.5 11.5 Min. - - - - - - - - - - - - - - - - - - - - - - - - DATA SHEET Hysteresis BHYS Typ. 10.0 10.0 10.0 5.6 5.2 4.8 17 15.2 13.1 31.6 28 20 5.5 5.5 4.0 4.5 4.0 4.0 1.8 2.0 1.6 2.2 2.2 2.0 Max. - - - Unit mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT - - - - - - - - - - - - - - - - - - - - - 10 April 8, 2009; DSH000150_001EN Micronas DATA SHEET HAL1xy 3.3. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in Section 2.5.: Characteristics on page 9. During the initialization time, the output state is not defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above BON. The output will be high if B is below BOFF. For magnetic fields between BOFF and BON, the output state of the HAL sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic field must be above BONmax, respectively, below BOFFmin. 3.4. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 3-1). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. Please contact Micronas for the detailed investigation reports with the EMC and ESD results. 3. Application Notes 3.1. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). T J = T A + T At static conditions and continuous operation, the following equation applies: T = I DD x V DD x R th If IOUT > IDD, please contact Micronas application support for detailed instructions on calculating ambient temperature. For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: T Amax = T Jmax - T RV 220 W 1 VEMC VP 4.7 nF VDD OUT 3 20 pF 2 GND RL 1.2 kW 3.2. Extended Operating Conditions All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 8). Fig. 3-1: Test circuit for EMC investigations Supply Voltage Below 3.8 V Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some characteristics may be outside the specification. Note: The functionality of the sensor below 3.8 V is not tested. For special test conditions, please contact Micronas. Micronas April 8, 2009; DSH000150_001EN 11 HAL1xy 4. Data Sheet History 1. Data Sheet: "HAL1xy Hall-Effect Switch IC Family", April 8, 2009, DSH000150_001EN. First release of the data sheet. DATA SHEET Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com 12 April 8, 2009; DSH000150_001EN Micronas |
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